Investigation of Ga contamination due to analysis by dual beam FIB

Proceedings of the Asian Test Symposium

Volumn , Issue , 1999, Pages 389-393

  Sakata, Takahide ^a   Ogiwara, Toshiya ^a   Takahashi, Hideyuki ^a   Sekine, Tetsu ^a  

^a JEOL LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED ION BEAMS (FIB);

CONTAMINATION; INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTING GALLIUM; X RAY SPECTROSCOPY;

LSI CIRCUITS;

EID: 0033357324     PISSN: 10817735     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)

1. T. Sakata, Y. Iijima, S. Maeda and T. Sekine, "Investigation on Ga Contamination due to Dual Beam FIB for In-line Use", Journal of Surface Analysis, Surface Analysis Society of Japan, Tokyo, 1999, Vol.5, No.1, pp.120-123
2. T. Sekine and T. Sakata, "JFS-9815 Dual Beam FIB", JEOL NEWS, JEOL LTD., Tokyo, 1998, Vol. 33E, No. 1, pp.41-47.
3. J. Kawai, S. Hayakawa, Y. Goshi, Y. Kitajima, and K. Maeda, "Total Reflection X-ray Photoelectron Spectroscopy", J. Electron. Spectrvsc. Relat. Phenonz., ELSEVIER, Amsterdam, 1995, Vol. 76, pp.313-318