Charge glass transition in disordered two-dimensional arrays of mesoscopic grains

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 64-67

  Enomoto, Yoshihisa ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON TUNNELING; GLASS TRANSITION; THERMAL EFFECTS;

CHARGE GLASS TRANSITION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033357097     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00249-5     Document Type: Article

References (10)

1. Kastner M. Rev. Mod. Phys. 64:1992;849.
2. Mooij J.E.et al. Phys. Rev. Lett. 65:1990;645.
3. Middleton A.A., Wingreen N.S. Phys. Rev. Lett. 71:1993;3198.
4. Granato E., Kosterlitz J.M. Phys. Rev. Lett. 81:1998;3888.
5. Yano K.et al. IEEE Trans. Eclectron Dev. 49:1994;1628.
6. Tighe T.S.et al. Phys. Rev. B. 47:1993;1145.
7. Delsing P.et al. Phys. Rev. B. 50:1994;3959.
8. Hyman R.A.et al. Phys. Rev. B. 51:1995;15304.
9. Enomoto Y., Maekawa S. Physica C. 274:1997;351.
10. Kobayashi S.et al. Jpn. J. Appl. Phys. 34:1995;4548.