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Volumn 567, Issue , 1999, Pages 65-70
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Formation of high quality oxynitride gate dielectrics by high pressure thermal oxidation of Si in NO
a
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Author keywords
[No Author keywords available]
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Indexed keywords
FILM GROWTH;
GATES (TRANSISTOR);
HIGH PRESSURE EFFECTS;
HOT CARRIERS;
LEAKAGE CURRENTS;
LOW TEMPERATURE OPERATIONS;
NITROGEN;
OXYGEN;
SILICA;
THICKNESS MEASUREMENT;
ULTRATHIN FILMS;
HIGH PRESSURE NITRIC OXIDE;
LOW THERMAL BUDGET PROCESS;
OXYNITRIDE DIELECTRICS;
REDUCED THERMAL BUDGET PROCESS;
VERTICAL HIGH PRESSURE PROCESS;
DIELECTRIC FILMS;
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EID: 0033356930
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-567-65 Document Type: Conference Paper |
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Times cited : (7)
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References (10)
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