Epitaxial growth of Mn3O4 film on MgO(0 0 1) substrate by plasma-assisted molecular beam epitaxy (MBE)

Journal of Crystal Growth

Volumn 205, Issue 4, 1999, Pages 531-536

  Guo, L W ^a   Ko, H J ^a   Makino, H ^a   Chen, Y F ^a   Inaba, K ^b   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b RIGAKU CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MAGNETIC PROPERTIES; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; SINGLE CRYSTALS; STOICHIOMETRY; SUBSTRATES; THIN FILMS; TRANSPORT PROPERTIES;

ARC TRANSFERRED METHODS; CHEMICAL VAPOR TRANSPORT; COLLOSAL MAGNETORESISTANCE MATERIALS; MANGANESE OXIDES; VERNEUIL FLAME FUSION PROCESS;

MAGNESIA;

EID: 0033356774     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00303-6     Document Type: Article

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