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Volumn 46, Issue 10, 1999, Pages 2005-2012

Thyristor photovoltaic devices formed by epitaxial growth

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; LOW TEMPERATURE OPERATIONS; PASSIVATION; PHOSPHORUS; SILICON WAFERS; SUBSTRATES; THYRISTORS;

EID: 0033354955     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.791989     Document Type: Article
Times cited : (2)

References (9)
  • 4
    • 36749107867 scopus 로고
    • July 15
    • G. Majni and G. Ottaviani, "Large-area uniform growth of {100} Si through Al film by solid epitaxy," Appl. Phys. Lett., vol. 31, no. 2, pp. 125-126, July 15, 1977.
    • (1977) Appl. Phys. Lett. , vol.31 , Issue.2 , pp. 125-126
    • Majni, G.1    Ottaviani, G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.