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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5847-5850

Work function changes of GaAs surfaces induced by Se treatment

(4) Suzuki, Satoru a Maeda, Fumihiko b Watanabe, Yoshio a Ohno, Takahisa b

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL ORIENTATION; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; MATHEMATICAL MODELS; PHOTOEMISSION; SEMICONDUCTING SELENIUM; SEMICONDUCTOR GROWTH;

SURFACE DIPOLE MOMENTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033354362 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.5847 Document Type: Article

Times cited : (5)

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