Investigation of low loss and high reliability encapsulation technology in large-area, high-power semiconductor devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 11, 1999, Pages 6232-6236

  Morita, Toshiaki ^a   Kato, Mitsuo ^a   Onuki, Jin ^a   Onose, Hidekatsu ^a   Matsuura, Nobuyoshi ^a   Sakurada, Shuroku ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; ENCAPSULATION; HARDNESS; HEAT TREATMENT; MOLYBDENUM; MOUNTINGS; SHEET METAL; SILVER PLATING; SPUTTERING; SURFACE CLEANING;

CONTACT RESISTANCE;

SEMICONDUCTOR DEVICES;

EID: 0033354148     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6232     Document Type: Article

References (8)

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8. Selected Values of Chemical Thermodynamic Properlies (U.S. Government Printing Office, Washington D.C., 1969) Nail. Bur. Stand. Tech. Note, p. 270.