Annealing of plasma charging damage and residual degradation in MOS transistors

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1999, Pages 61-64

  Brozek, Tomasz ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; GATES (TRANSISTOR); MOSFET DEVICES; OXIDES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

GATE OXIDE; PLASMA CHARGING DAMAGE; PLASMA INDUCED DAMAGE; POST METALLIZATION ANNEALING; RESIDUAL DEGRADATION;

PLASMA APPLICATIONS;

EID: 0033353820     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (14)