Effect of hydrogen anneals on niobium-doped lead zirconate titanate capacitors with lanthanum strontium cobalt oxide/platinum electrodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 B, 1999, Pages 5361-5363

  Evans Jr , Joe T ^a   Boyer, Leonard L ^a   Velasquez, Geri ^b   Ramesh, Ramamoorthy ^b   Aggarwal, Sanjeev ^a   Keramidas, Vassillis ^c  

^a Radiant Technologies Incorporated   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c TELCORDIA TECHNOLOGIES   (United States)

Author keywords

Ferroelectric; Forming gas; Hydrogen damage; PZT

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRODES; FERROELECTRIC DEVICES; HYDROGEN; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; LEAKAGE CURRENTS; NIOBIUM; PASSIVATION; PLATINUM; TITANIUM DIOXIDE;

INTER-LAYER DIELECTRICS (ILD); LANTHANUM STRONTIUM COBALT OXIDE; LEAD ZIRCONATE TITANATE;

CAPACITORS;

EID: 0033353237     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5361     Document Type: Article

References (1)

1. J. T. Evans, Jr., L. L. Boyer, G. Velasquez, R. Ramesh, S. Aggarwal and V. Keramidas: Appl. Phys. Lett. 73 (1998) 1973.