Growth of thin Ag islands on Ge(001)-2 × 1 surfaces below room temperature

Surface Science

Volumn 438, Issue 1-3, 1999, Pages 123-130

  Komori, F ^a   Kushida, K ^a   Hattori, K ^b   Arai, S ^a   Iimori, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FILM GROWTH; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SILVER; SURFACE STRUCTURE; TEMPERATURE;

ROOM TEMPERATURE; THIN SILVER ISLAND;

SEMICONDUCTING GERMANIUM;

EID: 0033352851     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00561-0     Document Type: Article

References (7)

1. Burns M.J., Lince J.R., Williams R.S., Chaikin P.M. Solid State Commun. 51:1984;865.
2. Iraji-zad A., Hardiman M. Solid State Commun. 83:1992;467.
3. Hattori K., Takahashi Y., Iimori T., Komori F. Surf. Sci. 357/358:1996;361.
4. K. Kushida, K. Hattori, S. Arai, T. Iimori, F. Komori, submitted for publication.
5. Lince J.R., Nelson J.G., Williams R.S. J. Vac. Sci. Technol. B1:1983;553.
6. Miller T., Rosenwinkel E., Chiang T.-C. Phys. Rev. B. 30:1984;570.
7. Liu Y., Nease B., Goldman A.M. Phys. Rev. B. 45:1992;10143.