Effects of gas environments on porous silicon photoluminescence

Materials Research Society Symposium - Proceedings

Volumn 560, Issue , 1999, Pages 191-196

  Di Francia, G ^a   Ferrara, V L A ^b   Lancellotti, L ^a,b   Quercia, L ^a   Fasolino, T ^a  

^a ENEA CR Portici   (Italy)

^b INFM Dipartimento di Scienze Fisiche   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACETONE; CRYSTAL GROWTH FROM MELT; ELECTROCHEMISTRY; ETCHING; LASER APPLICATIONS; NITROGEN; OPTICAL VARIABLES MEASUREMENT; OXIDATION; PHOTOLUMINESCENCE; QUENCHING; ULTRATHIN FILMS;

DRY AIR; GAS ENVIRONMENTS; PEAK WAVELENGTH;

POROUS SILICON;

EID: 0033351908     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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