Initial oxygen interaction between Ge(100) and Ge/Si(100) surfaces compared by scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 A, 1999, Pages

  Fukuda, Tsuneo ^a,b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; OXIDATION; OXYGEN; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

HETEROEPITAXY;

SEMICONDUCTING FILMS;

EID: 0033351522     PISSN: 00214922     EISSN: None     Source Type: None    
DOI: 10.1143/jjap.38.l1450     Document Type: Article

References (11)