Terahertz tunnel ionization of DX-centers in AlGaAs : Te

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 766-769

  Ketterl, H ^a   Ziemann, E ^a   Ganichev, S D ^a,b   Yassievich, I N ^b   Belyaev, A ^c   Schmult, S ^a   Prettl, W ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

DX center; Ionization; Persistent photoconductivity; Tunneling

Indexed keywords

ELECTRIC FIELD EFFECTS; IONIZATION; LASER APPLICATIONS; PHOTOCONDUCTIVITY; TELLURIUM;

ALUMINUM GALLIUM ARSENIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0033350958     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00644-4     Document Type: Article

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