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Volumn 273-274, Issue , 1999, Pages 677-680

Zeeman spectroscopy of the D1 bound exciton in 3C-, and 4H-SiC

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; EXCITONS; PERTURBATION TECHNIQUES; PHOTOLUMINESCENCE; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS;

EID: 0033350956     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00602-X     Document Type: Article
Times cited : (7)

References (5)
  • 1
    • 33847551284 scopus 로고    scopus 로고
    • Proceedings of the International Conference on Radiation Effects in Semiconductors, Institute of Physics and Physical Society, London, 1977
    • W. J. Choyke, in: Proceedings of the International Conference on Radiation Effects in Semiconductors, IOP Conf. Proc., Institute of Physics and Physical Society, London, 1977, p.58.
    • IOP Conf. Proc. , pp. 58
    • Choyke, W.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.