Novel planarized, silicon Trench Sidewall Oxide-Merged P-i-n Schottky (TSOX-MPS) rectifier

IEEE Electron Device Letters

Volumn 20, Issue 12, 1999, Pages 627-629

  Gupta, Rajesh N ^a   Min, W G ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON;

SCHOTTKY RECTIFIERS;

ELECTRIC RECTIFIERS;

EID: 0033350527     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.806106     Document Type: Article

References (7)

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3. S. Kunori, J. Ishida, M. Tananka, M. Wakatabe, and T. Kan, "The low power dissipation Schottky barrier diode with trench structure," in Proc. International Symp. Power Semiconductor Devices and ICs, 1992, pp. 66-71.
4. M. Mehrotra and B. J. Baliga, "The trench MOS barrier Schottky (TMBS) rectifier," in IEDM Tech. Dig., pp. 28.2.1-28.2.4, 1993.
5. B. J. Baliga, "Analysis of high voltage merged P-I-N/Schottky (MPS) rectifier," IEEE Electron Device Lett., vol. EDL-8, pp. 407-409, 1987.
6. B. J. Baliga and H. R. Chang, "The merged P-I-N/Schottky (MPS) rectifier: A high voltage, high speed power diode," in IEDM Tech. Dig., pp. 658-661, 1987.
7. S. L. Tu and B. J. Baliga, "Controlling the characteristics of the MPS rectifier by variation of area of Schottky region," IEEE Trans. Electron Devices, vol. 40, July 1993.