Compensation and trapping in semi-insulating CdZnTe

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3768, Issue , 1999, Pages 115-128

  Lee, E Y ^a   McChesney, J L ^a   James, R B ^a   Olsen, R W ^a   Hermon, H ^a   Schieber, M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRAPS; EMISSION SPECTROSCOPY; HOLE TRAPS; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DEVICES; THERMOELECTRICITY;

CADMIUM ZINC TELLURIDE; DARK CONDUCTIVITY; SEMICONDUCTOR DETECTORS; THERMALLY-STIMULATED CONDUCTIVITY (TSC); THERMOELECTRIC VOLTAGE SPECTROSCOPY (TEVS);

RADIATION DETECTORS;

EID: 0033349170     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.366575     Document Type: Conference Paper

References (36)