SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 433, Issue , 1999, Pages 362-366

Ge/Bi/Si(001)-c(4 × 2) interface studied by high-resolution core-level spectroscopy

(8) De Padova, P a Larciprete, R b Ottaviani, C a Priori, S a Quaresima, C a Reginelli, A a Ressel, B a Perfetti, P a

a CNR (Italy)

b ENEA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; BISMUTH; CRYSTAL LATTICES; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; GERMANIUM; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

HIGH RESOLUTION CORE LEVEL SPECTROSCOPY; LATTICE MISMATCH;

INTERFACES (MATERIALS);

EID: 0033347953 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(99)00505-1 Document Type: Article

Times cited : (3)

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