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Volumn 26, Issue 6, 1999, Pages 395-404
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Improvement in intersubband optical absorption and the effects of device parameter variations in quantum wells with an applied electric field
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
ELECTRIC FIELDS;
ELECTRON TRANSITIONS;
LIGHT ABSORPTION;
PHOTODETECTORS;
SEMICONDUCTING GALLIUM ARSENIDE;
ASYMMETRIC DOUBLE QUANTUM WELL;
INTERSUBBAND OPTICAL ABSORPTION;
STARK EFFECT;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0033347795
PISSN: 07496036
EISSN: None
Source Type: Journal
DOI: 10.1006/spmi.1999.0784 Document Type: Article |
Times cited : (7)
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References (23)
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