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Volumn 26, Issue 6, 1999, Pages 395-404

Improvement in intersubband optical absorption and the effects of device parameter variations in quantum wells with an applied electric field

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELDS; ELECTRON TRANSITIONS; LIGHT ABSORPTION; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033347795     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1999.0784     Document Type: Article
Times cited : (7)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.