메뉴 건너뛰기




Volumn 17, Issue 12, 1999, Pages 2595-2604

Design and realization of a 1.55-μm patterned vertical cavity surface emitting laser with lattice-mismatched mirror layers

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; LIGHT MODULATION; MIRRORS; OPTICAL COMMUNICATION EQUIPMENT; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0033346860     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.809682     Document Type: Article
Times cited : (7)

References (28)
  • 1
    • 0027699125 scopus 로고
    • High speed modulation characteristics of helium implanted zinc-diffused vertical cavity surface emitting lasers
    • T. G. Dziura, Y. J. Yang, R. Femandez, T. Bardin, and S. C. Wang, "High speed modulation characteristics of Helium implanted Zinc-diffused vertical cavity surface emitting lasers," IEEE Photon. Technol. Lett., vol. 5, pp. 1270-1292, 1993.
    • (1993) IEEE Photon. Technol. Lett. , vol.5 , pp. 1270-1292
    • Dziura, T.G.1    Yang, Y.J.2    Femandez, R.3    Bardin, T.4    Wang, S.C.5
  • 5
    • 0031185335 scopus 로고    scopus 로고
    • Low-threshold proton implanted 1.3 μm vertical cavity surface emitting lasers with dielectric and wafer bonded GaAs-AlAs Bragg mirrors
    • July
    • Y. Qian, Z. H. Zhu, Y. H. Lo, D. L. Huffaker, D. G. Deppe, H. Q. Hou, B. E. Hammons, W. Lin, and Y. K. Tu, "Low-threshold proton implanted 1.3 μm vertical cavity surface emitting lasers with dielectric and wafer bonded GaAs-AlAs Bragg Mirrors," IEEE Photon. Technol. Lett., vol. 9, July 1997.
    • (1997) IEEE Photon. Technol. Lett. , vol.9
    • Qian, Y.1    Zhu, Z.H.2    Lo, Y.H.3    Huffaker, D.L.4    Deppe, D.G.5    Hou, H.Q.6    Hammons, B.E.7    Lin, W.8    Tu, Y.K.9
  • 6
    • 0031075511 scopus 로고    scopus 로고
    • Continuous-wave operation up to 36 degree C of 1.3 μm GaInAsP-InP vertical-cavity surface-emitting lasers
    • S. Uchiyama, N. Yokouchi, and T. Ninomiya, "Continuous-wave operation up to 36 degree C of 1.3 μm GaInAsP-InP vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 9, p. 141, 1997.
    • (1997) IEEE Photon. Technol. Lett. , vol.9 , pp. 141
    • Uchiyama, S.1    Yokouchi, N.2    Ninomiya, T.3
  • 7
    • 0031250889 scopus 로고    scopus 로고
    • Optically pumped, monolithic, all-epitaxial 1.56 μm m vertical cavity surface emitting laser using Sb-based reflectors
    • O. Blum, J. F. Klem, K. L. Lear, G. A. Vawter, and S. R. Kurtz, "Optically pumped, monolithic, all-epitaxial 1.56 μm m vertical cavity surface emitting laser using Sb-based reflectors," Electron. Lett., vol. 33, no. 22, pp. 1878-1880, 1997.
    • (1997) Electron. Lett. , vol.33 , Issue.22 , pp. 1878-1880
    • Blum, O.1    Klem, J.F.2    Lear, K.L.3    Vawter, G.A.4    Kurtz, S.R.5
  • 9
    • 0032115348 scopus 로고    scopus 로고
    • Uniform threshold current, continuous-wave, singlemode 1300 nm vertical cavity lasers from 0 to 70 degree C
    • V. Jayaraman, J. C. Geske, M. H. MacDougal, F. H. Peters, T. D. Lowes, and T. T. Char, "Uniform threshold current, continuous-wave, singlemode 1300 nm vertical cavity lasers from 0 to 70 degree C," Electron. Lett., vol. 34, no. 14, pp. 1405-1407, 1998.
    • (1998) Electron. Lett. , vol.34 , Issue.14 , pp. 1405-1407
    • Jayaraman, V.1    Geske, J.C.2    MacDougal, M.H.3    Peters, F.H.4    Lowes, T.D.5    Char, T.T.6
  • 10
    • 0033530981 scopus 로고    scopus 로고
    • Near room temperature continuous-wave operation of electrically pumped 1.55 μm vertical cavity lasers with InGaAsP/InP bottom mirror
    • S. Rapp, F. Salomonsson, J. Bentell, I. Sagnes, H. Moussa, C. Meriadec, R. Raj, K. Streubel, and M. Hammar, "Near room temperature continuous-wave operation of electrically pumped 1.55 μm vertical cavity lasers with InGaAsP/InP bottom mirror," Electron. Lett, vol. 35, no. 1, pp. 49-50, 1999.
    • (1999) Electron. Lett. , vol.35 , Issue.1 , pp. 49-50
    • Rapp, S.1    Salomonsson, F.2    Bentell, J.3    Sagnes, I.4    Moussa, H.5    Meriadec, C.6    Raj, R.7    Streubel, K.8    Hammar, M.9
  • 11
    • 0029267483 scopus 로고
    • Ultra-low threshold current vertical cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors
    • M. MacDougal, P. D. Dapkus, V. Pudikov, H. Zhao, and G. M. Yang, "Ultra-low threshold current vertical cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors," IEEE Photon. Technol. Lett., vol. 7, pp. 229-231, 1995.
    • (1995) IEEE Photon. Technol. Lett. , vol.7 , pp. 229-231
    • MacDougal, M.1    Dapkus, P.D.2    Pudikov, V.3    Zhao, H.4    Yang, G.M.5
  • 12
    • 0001565564 scopus 로고
    • Kinetic aspects of growth front surface morphology and defect formation during molecular-beam epitaxy growth of strained thin films
    • S. V. Ghaisas and A. Madhukar, "Kinetic aspects of growth front surface morphology and defect formation during molecular-beam epitaxy growth of strained thin films," J. Vac. Sci. Technol. B, vol. 7, no. 2, pp. 264-268, 1898.
    • (1898) J. Vac. Sci. Technol. B , vol.7 , Issue.2 , pp. 264-268
    • Ghaisas, S.V.1    Madhukar, A.2
  • 13
    • 21544434863 scopus 로고
    • Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
    • E. A. Fitzgerald, G. P. Watson, R. E. Proano, and D. G. Ast, "Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area," J. Appl. Phys., vol. 65, no. 6, 1989.
    • (1989) J. Appl. Phys. , vol.65 , Issue.6
    • Fitzgerald, E.A.1    Watson, G.P.2    Proano, R.E.3    Ast, D.G.4
  • 16
    • 0031552783 scopus 로고    scopus 로고
    • Growth of high quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structures
    • H. Gebretsadik, K. Kamath, K. Linder, P. K. Bhattacharya, C. Caneau, and R. Bhat, "Growth of high quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structures," Appl. Phys. Lett., vol. 71, pp. 581-583, 1997.
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 581-583
    • Gebretsadik, H.1    Kamath, K.2    Linder, K.3    Bhattacharya, P.K.4    Caneau, C.5    Bhat, R.6
  • 18
    • 0031185604 scopus 로고    scopus 로고
    • Cold-cavity vectorial eigenmodes of VCSEL's
    • July
    • D. Burak and R. Binder, "Cold-cavity vectorial eigenmodes of VCSEL's," IEEE J. Quantum Electron., vol. 33, pp. 1205-1215, July 1997.
    • (1997) IEEE J. Quantum Electron. , vol.33 , pp. 1205-1215
    • Burak, D.1    Binder, R.2
  • 19
    • 0030211765 scopus 로고    scopus 로고
    • Optimization of the operating point of a vertical cavity surface emitting laser
    • Aug.
    • G. W. Taylor and Q. Yang, "Optimization of the operating point of a vertical cavity surface emitting laser," IEEE J. Quantum Electron., vol. 32, pp. 1441-1449, Aug. 1996.
    • (1996) IEEE J. Quantum Electron. , vol.32 , pp. 1441-1449
    • Taylor, G.W.1    Yang, Q.2
  • 20
    • 0030406029 scopus 로고    scopus 로고
    • Theoretical analysis of modulation response and second-order harmonic distortion in vertical cavity surface emitting lasers
    • Dec.
    • S. F. Yu, W. N. Wong, P. Shum, and E. H. Li, "Theoretical analysis of modulation response and second-order harmonic distortion in vertical cavity surface emitting lasers," IEEE J. Quantum Electron., vol. 32, pp. 2139-2147, Dec. 1996.
    • (1996) IEEE J. Quantum Electron. , vol.32 , pp. 2139-2147
    • Yu, S.F.1    Wong, W.N.2    Shum, P.3    Li, E.H.4
  • 21
    • 0028380710 scopus 로고
    • Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/InP strained quantum-well lasers
    • S. Seki, T. Yamanaka, W. Lui, Y. Yoshikuni, and K. Yokoyama, "Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/InP strained quantum-well lasers," IEEE J. Quantum Electron., vol. 30, pp. 500-509, 1994.
    • (1994) IEEE J. Quantum Electron. , vol.30 , pp. 500-509
    • Seki, S.1    Yamanaka, T.2    Lui, W.3    Yoshikuni, Y.4    Yokoyama, K.5
  • 22
    • 0028549879 scopus 로고
    • Low threshold half-wave vertical-cavity lasers
    • D. L. Huffaker, J. Shin, and D. G. Deppe, "Low threshold half-wave vertical-cavity lasers," Electron. Lett., vol. 30, no. 23, pp. 1946-1947 1994.
    • (1994) Electron. Lett. , vol.30 , Issue.23 , pp. 1946-1947
    • Huffaker, D.L.1    Shin, J.2    Deppe, D.G.3
  • 23
    • 0029632464 scopus 로고
    • Selectively oxidized vertical cavity surface emitting lasers with 50% power conversion efficiency
    • K. L. Lear, K. D. Choquette, R. P. Schneider, Jr., S. P. Kilcoyne, and K. M. Geib, "Selectively oxidized vertical cavity surface emitting lasers with 50% power conversion efficiency," Electron. Lett., vol. 31, p. 208, 1995.
    • (1995) Electron. Lett. , vol.31 , pp. 208
    • Lear, K.L.1    Choquette, K.D.2    Schneider R.P., Jr.3    Kilcoyne, S.P.4    Geib, K.M.5
  • 24
    • 0028393287 scopus 로고
    • Low threshold, room temperature pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer
    • K. Uomi, S. J. Yoo, A. Scherer, R. Bhat, N. C. Andreadakis, C. E. Zah, M. A. Koza, and T. P. Lee, "Low threshold, room temperature pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer," IEEE Photon. Technol. Lett., vol. 6, p. 317, 1994.
    • (1994) IEEE Photon. Technol. Lett. , vol.6 , pp. 317
    • Uomi, K.1    Yoo, S.J.2    Scherer, A.3    Bhat, R.4    Andreadakis, N.C.5    Zah, C.E.6    Koza, M.A.7    Lee, T.P.8
  • 26
    • 0031648067 scopus 로고    scopus 로고
    • Lateral oxidation of InAlAs for in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications
    • H. Gebretsadik, K. K. Kamath, W.-D. Zhou, P. K. Bhattacharya, C. Caneau, and R. Bhat, "Lateral oxidation of InAlAs for in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications," Appl. Phys. Lett., vol. 72, pp. 135-137, 1997.
    • (1997) Appl. Phys. Lett. , vol.72 , pp. 135-137
    • Gebretsadik, H.1    Kamath, K.K.2    Zhou, W.-D.3    Bhattacharya, P.K.4    Caneau, C.5    Bhat, R.6
  • 27
    • 0032473723 scopus 로고    scopus 로고
    • MOVPE growth of InGaAsP/InP-based vertical cavity structures for wafer fused VCSEL's
    • C. Amano, Y. Itoh, Y. Ohiso, H. Takenouchi, T. Takodoro, and T. Kurokawa, "MOVPE growth of InGaAsP/InP-based vertical cavity structures for wafer fused VCSEL's," J. Cryst. Growth, vol. 187, p. 35, 1998.
    • (1998) J. Cryst. Growth , vol.187 , pp. 35
    • Amano, C.1    Itoh, Y.2    Ohiso, Y.3    Takenouchi, H.4    Takodoro, T.5    Kurokawa, T.6
  • 28
    • 0031258024 scopus 로고    scopus 로고
    • Temperature sensitivity of 1.54-mm vertical-cavity lasers with an InP-based Bragg reflector
    • S. Rapp, J. Piprek, K. Streubel, J. Andre, and J. Wallin, "Temperature sensitivity of 1.54-mm vertical-cavity lasers with an InP-based Bragg reflector," IEEE J. Quantum Electron., vol. 33, pp. 1839-1845, 1997.
    • (1997) IEEE J. Quantum Electron. , vol.33 , pp. 1839-1845
    • Rapp, S.1    Piprek, J.2    Streubel, K.3    Andre, J.4    Wallin, J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.