Highly manufacturable 0.18 um generation LOGIC technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 675-678

  Ikeda, Shuji ^a   Yoshida, Y ^a   Shoji, K ^a   Kuroda, K ^a   Komori, K ^a   Suzuki, N ^a   Okuyama, K ^a   Kamohara, S ^a   Ishitsuka, N ^a   Miura, H ^a   Murakami, E ^a   Yamanaka, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; ION IMPLANTATION; LEAKAGE CURRENTS; LOGIC CIRCUITS; METALLIZING; NITROGEN OXIDES; RAPID THERMAL ANNEALING; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

COBALT SALICIDE PROCESS; DUAL DAMASCENE COPPER; SHALLOW TRENCH ISOLATION;

INTEGRATED CIRCUIT LAYOUT;

EID: 0033345515     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)