The valence electronic structure of n-doped p-sexiphenyl

Materials Research Society Symposium - Proceedings

Volumn 561, Issue , 1999, Pages 167-172

  Theissl, U ^a   List, E J W ^a   Koch, N ^a,b   Vollmer, A ^c   Schrader, S ^b   Pireaux, J J ^d   Leising, G ^a  

^a GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^b UNIVERSITY OF POTSDAM   (Germany)

^c FREIE UNIVERSITÄT BERLIN   (Germany)

^d UNIVERSITY OF NAMUR   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CESIUM; DEPOSITION; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; ELECTRONS; MOLECULES; ORGANIC MINERALS; POTASSIUM; SEMICONDUCTOR DOPING; SURFACES; ULTRAVIOLET SPECTROSCOPY;

INTRAGAP EMISSION; PHOTOELECTRONS; VALENCE ELECTRONIC STRUCTURE;

THIN FILMS;

EID: 0033342326     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-561-167     Document Type: Article

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