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Volumn , Issue , 1999, Pages 719-722
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Physics-based, unified gate-oxide breakdown model
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
ELECTRIC BREAKDOWN;
ELECTRIC CHARGE;
ELECTRIC FIELDS;
ELECTRIC POTENTIAL;
EXTRAPOLATION;
GATES (TRANSISTOR);
MATHEMATICAL MODELS;
REACTION KINETICS;
BREAKDOWN MODEL;
GATE OXIDE;
MOS DEVICES;
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EID: 0033342076
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (28)
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References (12)
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