Dual ion implantation of non-dopant and dopant ions into Si for defect engineering of shallow p+-junctions

Proceedings of the International Conference on Ion Implantation Technology

Volumn 2, Issue , 1999, Pages 1047-1050

  Ohno, Naotsugu ^a   Hara, Tohru ^a   Matsunaga, Yasuhiko ^a   Current, Michael I ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; PRECIPITATION (CHEMICAL); SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

DEFECT ENGINEERING; DUAL ION IMPLANTATION;

ION IMPLANTATION;

EID: 0033341936     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)