Silicon-aluminum oxynitride composite films deposited by reactive ion beam sputtering

Proceedings of the International Conference on Ion Implantation Technology

Volumn 2, Issue , 1999, Pages 775-778

  Ogawa, Sohichi ^a   Suzuki, Yoshihiko ^a   Yoshitake, Masaaki ^a   Natsukawa, Kazuki ^a  

^a OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; AMORPHOUS FILMS; DIELECTRIC LOSSES; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC INSULATING COATINGS; ETCHING; HYDROFLUORIC ACID; ION BEAMS; ION BOMBARDMENT; PASSIVATION; SILICON NITRIDE; SPUTTER DEPOSITION;

REACTIVE ION BEAM SPUTTERING; SILICON ALUMINUM OXYNITRIDE;

PROTECTIVE COATINGS;

EID: 0033341926     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)