Initial stages of Ge growth on Si(1 00): Ad-atoms, ad-dimers, and ad-trimers

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 589-592

  Dalpian, G M ^a   Janotti, A ^a   Fazzio, A ^a   Da Silva, Antônio J R ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Ab initio calculations; Ge on Si(1 00); Semiconductor growth

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DIMERS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH;

AD-ATOMS; AD-DIMERS; AD-TRIMERS;

SEMICONDUCTING SILICON;

EID: 0033341471     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00580-3     Document Type: Article

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