Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire

Superlattices and Microstructures

Volumn 26, Issue 5, 1999, Pages 307-315

  Fu, Y ^a   Willander, M ^a   Liu, X Q ^b   Lu, W ^b   Shen, S C ^b   Tan, H H ^c   Yuan, S ^c   Jagadish, C ^c  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

ELECTRON ENERGY SUBLEVELS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0033340372     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1999.0783     Document Type: Article

References (22)

1. Ogawa T., Takagahara T. Phys. Rev. B44:1991;8138.
2. Glutsch S., Bechstedt F. Phys. Rev. B47:1993;4315.
3. Kapon E., Hwang D. M., Bhat R. Phys. Rev. Lett. 63:1989;430-433.
4. Ryan J. F., Maciel A. C., Rota L., Turner K., Freyland J. M., Marti U., Martin D., Morier-Gemoud F., Reinhart F. K. Phys. Rev. B53:1996;R4225-R4228.
5. Kim et al. Y. J. Appl. Phys. 80:1996;5014-5020.
6. Wang X.-L., Ogura M., Matsuhata H. Appl. Phys. Lett. 66:1995;1506-1508.
7. Kapon E., Simhony S., Bhat R., Hwang D. M. Appl. Phys. Lett. 55:1989;2715-2717.
8. Arakawa Y., Yamauchi Y., Schulman J. N. Phys. Rev. B43:1991;4732.
9. Citrin D. S., Chang Y. IEEE J. Quantum Electron. 29:1993;97.
10. Tadic T., Ikonic Z. Phys. Rev. B50:1994;7680.
11. Bastard G., Marzin J. Solid State Commun. 91:1994;39.
12. Rinaldi et al. R. Phys. Rev. Lett. 73:1994;2899.
13. Baraff G. A., Gershoni D. Phys. Rev. B43:1991;4011.
14. Liu X. Q., Lu W., Chen X. S., Shen S. C., Wang H. Z., Zhao F. L., Zheng X. G., Fu Y., Willander M. Study of Carrier Relaxation Process of V-Grooved AlGaAs/GaAs Quantum Wire Modified by Selective Implantation Induced Intermixing. 1999.
15. Wang X. L., Ogura M., Matsuhata H. Appl. Phys. Lett. 66:1995;1504.
16. 1995, 67, 3629.
17. 1995, 67, 806.
18. Madelung O. Semiconductors: Group IV Elements and III-V Compounds. 1991;101 Springer-Verlag, Berlin.
19. J. Hammersberg, 1998.
20. Haydock R., Heine V., Kelly M. J. Electronic structure based on the local atomic environment for tight-binding bands. J. Phys. C: Solid State Phys. 5:1972;2845-2858.
21. Economons E. N. Cardona M. Green's Function in Quantum Physics. 1979;Springer-Verlag, Berlin.
22. 1 - xAs multiple quantum well. Mod. Phys. Lett. B4:1990;917-920.