Using dopant activation of implanted wafers for low temperature (400 °C-600 °C) measurement in CVD equipment design

Proceedings of the International Conference on Ion Implantation Technology

Volumn 2, Issue , 1999, Pages 1211-1213

  Borland, John O ^a   Galewski, Carl ^a  

^a Varian Semiconductor Equipment ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; ANNEALING; CHEMICAL VAPOR DEPOSITION; ION IMPLANTATION; LOW TEMPERATURE OPERATIONS; PHOSPHORUS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING BORON;

CHEMICAL VAPOR DEPOSITION CHAMBERS;

SILICON WAFERS;

EID: 0033340231     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)