Boron diffusion in ultra low-energy (<1 keV/atom) decaborane (B10H14) ion implantation

Proceedings of the International Conference on Ion Implantation Technology

Volumn 2, Issue , 1999, Pages 1258-1261

  Kusaba, Takuya ^a   Shimada, Norihiro ^a   Aoki, Takaaki ^a   Matsuo, Jiro ^a   Yamada, Isao ^a   Goto, Kenichi ^a   Sugii, Toshihiro ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

DECABORANE; TRANSIENT ENHANCED DIFFUSION (TED);

MOSFET DEVICES;

EID: 0033339983     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)