Silicon nitride layer in silicon formed by nitrogen implantation with multiple energy

Proceedings of the International Conference on Ion Implantation Technology

Volumn 2, Issue , 1999, Pages 1133-1136

  Miyagawa, Y ^a   Baba, K ^a   Hatada, R ^a   Nakao, S ^a   Ikeyama, M ^a   Miyagawa, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; ION IMPLANTATION; LEAKAGE CURRENTS; NITROGEN; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; STOICHIOMETRY;

ENERGY SCANNING IMPLANTATION; TRIPLE ENERGY IMPLANTATION;

SEMICONDUCTING FILMS;

EID: 0033339975     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)