Self-aligned surface tunnel transistors fabricated by a regrowth technique

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 10 B, 1999, Pages

  Chun, Yong Jin ^a   Uemura, Tetsuya ^a   Baba, Toshio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; ETCHING; GATES (TRANSISTOR); LITHOGRAPHY; MASKS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TUNNEL JUNCTIONS;

SURFACE TUNNEL TRANSISTORS (STT);

TRANSISTORS;

EID: 0033338177     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1163     Document Type: Article

References (7)

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