Low temperature direct wafer bonding of silicon using a glass intermediate layer

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 1999, Pages 443-446

  Dragoi, V ^a   Alexe, M ^a   Reiche, M ^a   Goesele, U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; INTERFACES (MATERIALS); SEMICONDUCTING GLASS;

LOW TEMPERATURE DIRECT WAFER BONDING;

SILICON WAFERS;

EID: 0033337901     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)