Electron structure of amorphous SiO2 under strong electric field using DV-Xα

Journal of Non-Crystalline Solids

Volumn 259, Issue 1-3, 1999, Pages 121-126

  Makino, Y ^a   Hirao, K ^a,b   Kawamura, K ^c   Tanaka, I ^b   Adachi, H ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRIC FIELD EFFECTS; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; X RAY SPECTROSCOPY;

MADELUNG POTENTIAL; MOLECULAR ORBITAL;

FUSED SILICA;

EID: 0033335761     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(99)00533-5     Document Type: Article

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