Effect of etch pit density of InP substrate on the stability of InGaAs/InGaAsP quantum well laser materials

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3896, Issue , 1999, Pages 207-212

  Lim, Hwi Siong ^a   Ong, Teik Kooi ^a   Ooi, Boon Siew ^a   Lam, Yee Loy ^a   Chan, Yuen Chuen ^a   Zhou, Yan ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; ETCHING; PHOTOLUMINESCENCE; POINT DEFECTS; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMODYNAMIC STABILITY; WSI CIRCUITS;

BAND GAP SHIFT; ETCH PIT DENSITY; POINT DEFECT DENSITY; RAPID THERMAL PROCESSING;

QUANTUM WELL LASERS;

EID: 0033334083     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.370308     Document Type: Conference Paper

References (6)