Thermal equilibrium concentrations and diffusivities of intrinsic point defects in silicon

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 509-511

  Okino, Takahisa ^a   Shimozaki, Toshitada ^b  

^a NIPPON BUNRI UNIVERSITY   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; OXIDATION; POINT DEFECTS; SEMICONDUCTOR DOPING; STACKING FAULTS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

THERMAL EQUILIBRIUM CONCENTRATION;

SEMICONDUCTING SILICON;

EID: 0033330769     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00540-2     Document Type: Article

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