Plasma process-induced damage in SOI devices

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 97-100

  Poiroux, T ^a   Pelloie, J L ^a   Rodde, K ^a   Turban, G ^a   Reimbold, G ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; LEAKAGE CURRENTS; PLASMA APPLICATIONS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

CLASSICAL ANTENNA TEST STRUCTURES; ELECTRON SHADING; PLASMA PROCESSED INDUCED DAMAGE;

TRANSISTORS;

EID: 0033330341     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)