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Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 891-894

Hydrogen passivation of nitrogen-related energy levels in ZnSe and ZnSSe grown by MBE

(3) Seghier, D a Gudmundsson, J T a Gislason, H P a

a UNIVERSITY OF ICELAND (Iceland)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY OF SOLIDS; HOLE TRAPS; HYDROGENATION; MOLECULAR BEAM EPITAXY; NITROGEN; PASSIVATION; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

NET ACCEPTOR DENSITIES; NET CHARGE DENSITIES; NITROGEN-RELATED ENERGY LEVELS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033330145 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00547-5 Document Type: Article

Times cited : (2)

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