Preparation and pressure-induced semiconductor-metal transition of CrSi2 nanocrystals

Materials Letters

Volumn 41, Issue 3, 1999, Pages 97-100

  Lu, Jinshan ^b   Cui, Qiliang ^a   Yang, Haibin ^a   Liu, Bingbing ^a   Zou, Guangtian ^a  

^a JILIN UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE MEASUREMENT; ENERGY GAP; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; PLASMA APPLICATIONS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

PRESSURE-INDUCED SEMICONDUCTOR-METAL TRANSITIONS; SEMICONDUCTING CHROMIUM DISILICIDES NANOCRYSTALS;

CHROMIUM COMPOUNDS;

EID: 0033328982     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(99)00110-X     Document Type: Article

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