Continuous stimulated terahertz emission due to intra-center population inversion in uniaxially strained germanium

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 458-460

  Altukhov, I V ^a,b   Kagan, M S ^a   Gousev, Yu P ^b   Sinis, V P ^a   Korolev, K A ^a   Olsson, H K ^b   Galperin, Yu M ^c   Odnoblyudov, M A ^d   Yassievich, I N ^d   Chao, K A ^d  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF OSLO   (Norway)

^d LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON RESONANCE; HOLE TRAPS;

CARRIER POPULATION INVERSION; TERAHERTZ EMISSION;

SEMICONDUCTING GERMANIUM;

EID: 0033328783     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00319-1     Document Type: Article

References (5)

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3. Altukhov I.V.et al. JETP. 88:1999;51.
4. Gousev Yu.P.et al. Appl. Phys. Lett. 75:1999;757.
5. Odnoblyudov M.A.et al. Phys. Rev Lett. 83:1999;644.