Photoelectric properties of higher manganese silicide (HMS)-Si〈Mn〉-M structures

Semiconductor Science and Technology

Volumn 14, Issue 11, 1999, Pages 1012-1017

  Kamilov, T S ^a   Chirva, V P ^b   Kabilov, D K ^b  

^a TASHKENT STATE TECHNICAL UNIVERSITY   (Uzbekistan)

^b ARIFOV INSTITUTE OF ELECTRONICS   (Uzbekistan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC SPACE CHARGE; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTOIONIZATION; QUENCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

HIGHER MANGANESE SILICIDE; PHOTOELECTRIC PROPERTIES; SPACE CHARGE LIMITED CURRENTS;

SEMICONDUCTING MANGANESE COMPOUNDS;

EID: 0033328646     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/11/312     Document Type: Article

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