Comparison of at-wavelength inspection, printability, and simulation of nm-scale substrate defects in Extreme Ultraviolet Lithography (EUVL)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3873, Issue pt 1, 1999, Pages 429-439

  Cardinale, Gregory F ^a   Goldsmith, John E M ^a   Ray Chaudhuri, Avijit K ^a   Fisher, A ^a   Hector, Scott ^a   Mangat, Pawitter J S ^a   Masnyj, Zorian ^a   Mancini, David ^a   Wilkinson, Bill ^a   Bokor, Jeff ^a   Jeong, Seongtae ^a   Burkhart, Scott ^a   Cerjan, Charlie ^a   Walton, Chris ^a   Larson, Cindy ^a   et al , ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHROMIUM; COMPUTER SIMULATION; CRYSTAL DEFECTS; DRY ETCHING; INSTRUMENT SCALES; PHOTOLITHOGRAPHY; POINT DEFECTS; SILICA; SUBSTRATES; THIN FILMS; ULTRAVIOLET RADIATION;

ACTINIC INSPECTION TOOL; EXTREME ULTRAVIOLET LITHOGRAPHY; LINE DEFECTS; PROGRAMMED DEFECTS; PROXIMITY DEFECTS; RETICLE; SUBSTRATE DEFECTS; SUBTRACTIVE METAL PROCESS;

MASKS;

EID: 0033327376     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)