SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 535, Issue , 1999, Pages 145-150

Metalorganic molecular beam epitaxy of GaAsP for visible light-emitting devices on Si

(5) Yoshimoto, M a Saraie, J b Yasui, T a Ha, S b Matsunami, H a

a KYOTO INSTITUTE OF TECHNOLOGY (Japan)

b KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); INFRARED RADIATION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SUBSTRATES;

BUFFER LAYER; CRYSTALLINITY; DISLOCATION FORMATION; METALORGANIC MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033327134 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (2)

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