The cleaning at a back surface and edge of a wafer for introducing Cu metalization process

1999 IEEE International Symposium on Semiconductor Manufacturing, ISSM 1999 - Conference Proceedings

Volumn , Issue , 1999, Pages 149-152

  Itoh, M ^a   Ishii, Y ^a   Jinbo, T ^a   Akimori, H ^a   Futase, T ^b   Saeki, T ^a  

^a HITACHI LTD   (Japan)

^b Hitachi ULSI Systems Cn   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLEANING; CONTAMINATION; COPPER; MANUFACTURE; SEMICONDUCTOR DEVICE MANUFACTURE; TANTALUM COMPOUNDS; CMOS INTEGRATED CIRCUITS; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY; INTEGRATED CIRCUIT MANUFACTURE; METALLIC FILMS; METALLIZING;

CROSS CONTAMINATION; EXOTIC MATERIALS; HIGH SPEED; METALIZATIONS; QUANTITATIVE EVALUATION; SEMICONDUCTOR EQUIPMENT; SINGLE WAFER SYSTEMS; WAFER EDGE;

SILICON WAFERS; LSI CIRCUITS;

SEMICONDUCTOR WAFERS;

EID: 0033326981     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSM.1999.808759     Document Type: Conference Paper

References (3)

1. J M. Miyajima Semiconductor World, vol, 17, 13, 124, Dec, 1998
2. T. Kara, K. Sakala, K. Salo, K. Kinoshita, and Y. Kouzuki, "Cleaning ol'Cn by CSE method, " Extended Abs. of the 59"' Autumn Meeting, Hiroshima, Japan, Sep. 1998, p. 700.
3. J K. Takanashi, M. Mizimo, T. Hatano, and Y. Kitagawara, "Evaluation technique of metal contamination on the edge of silicon wafer, " Extended Abs. of the 45th Spring Meeting, Tokyo, Japan, Mar. 1998, p. 787.