High-quality GaAsxP1-x/In0.13Ga0.87P quantum well structure grown on Si substrate with a very few threading dislocations

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 A, 1999, Pages 6645-6649

  Fujimoto, Yasuhiro ^a   Yonezu, Hiroo ^a   Irino, Satoshi ^a,b   Samonji, Katsuya ^a,c   Momose, Kenji ^a   Ohshima, Naoki ^a,d  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

^c PANASONIC CORPORATION   (Japan)

^d YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

Heterointerface; Lattice mismatch; Misfit dislocation; Quantum well; Threading dislocation

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; LIGHT EMISSION; QUANTUM WELL LASERS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL;

BAND EDGE EMISSION; GALLIUM ARSENIC PHOSPHIDE; HETEROINTERFACES; INDIUM GALLIUM PHOSPHIDE; LATTICE MISMATCH; MISFIT DISLOCATIONS; THREADING DISLOCATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033326175     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6645     Document Type: Article

References (5)

1. I. Hayashi: Jpn. J. Appl. Phys. 32 (1993) 266.
2. D. K. Biegelsen, F. A. Ponce, A. J. Smith and J. C. Tramontana: J. Appl. Phys. 61 (1987) 1856.
3. H. Takasugi, M. Kawabe and Y. Bando: Jpn. J. Appl. Phys. 26 (1987) L584.
4. N. Hayafuji, M. Miyashita, T. Nishimura, K. Kadoiwa, H. Kumabe and T. Murotani: Jpn. J. Appl. Phys. 29 (1990) 2371.
5. J. W. Lee, H. Shichijo, H. L. Sai and R. J. Matyi: Appl. Phys. Lett. 50 (1987) 31.