Characterization of TMAHW silicon etchant using ammonium persulfate as an oxidizing agent

Canadian Conference on Electrical and Computer Engineering

Volumn 3, Issue , 1999, Pages 1627-1631

  Paranjape, M ^a   Brida, S ^a   Guarnieri, V ^a   Giacomozzi, F ^a   Zen, M ^a  

^a GEORGETOWN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CMOS INTEGRATED CIRCUITS; COMPOSITION EFFECTS; ETCHING; INTEGRATED CIRCUIT MANUFACTURE; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; SEMICONDUCTING SILICON; SOLUTIONS; THERMAL EFFECTS;

AMMONIUM PERSULFATE; ETCH RATES; ETHYLENEDIAMINE PYROCATECHOL WATER; HILLOCK FORMATION; OXIDIZING AGENT; POTASSIUM HYDROXIDE; SILICON ETCHANT; SURFACE QUALITY; TETRA METHYL AMMONIUM HYDROXIDE WITH WATER;

AMMONIUM COMPOUNDS;

EID: 0033326150     PISSN: 08407789     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)