Analysis of SRAM bit failure at high frequency operation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 475-478

  Yoshida, Yasuko ^a   Funayama, Kota ^a   Nishida, Akio ^a   Sekiguchi, Tomoko ^a   Nakamura, Kuniyasu ^a   Tomimatsu, Satoshi ^a   Umemura, Kaoru ^a   Yamanaka, Toshiaki ^a   Komori, Kazuhiro ^a   Mitsui, Yasuhiro ^a   Ikeda, Shuji ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETCHING; FAILURE ANALYSIS; FREQUENCIES; GRAIN SIZE AND SHAPE; HYDRAZINE; ION IMPLANTATION; PHOSPHORUS; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

BIT FAILURE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SELECTIVE ETCHING TECHNIQUE; STATIC RANDOM ACCESS MEMORY;

RANDOM ACCESS STORAGE;

EID: 0033324928     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)