Intrasubband fast absorption and emission of terahertz radiation by hot electrons in GaAs/AlGaAs MQW

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 223-225

  Vorobjev, L E ^a   Danilov, S N ^a   Donetsky, D V ^a   Firsov, D A ^a   Towe, E ^b   Zhukavin, R Kh ^c   Pavlov, S G ^c   Shastin, V N ^c  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b UNIVERSITY OF VIRGINIA   (United States)

^c INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; HOT CARRIERS; INTERFACES (MATERIALS); LIGHT ABSORPTION; LIGHT EMISSION; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE ROUGHNESS;

INTERFACE ROUGHNESS SCATTERING; INTRASUBBAND FAST ABSORPTION; TERAHERTZ RADIATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033324391     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00275-6     Document Type: Article

References (3)

1. Adamska H., Spector H.N. J. Appl. Phys. 59:1986;1123.
2. Hirakawa K., Grayson M., Tsui D.C., Kurdak C. Phys. Rev. B. 47:1993;16651.
3. Vorobjev L.E., Danilov S.N., Donetsky D.V., Firsov D.A., Kochegarov Yu.V., Stafeev V.I. Opt. Quantum Electron. 25:1993;705.