Mathematical model of the graded-band-gap semiconductor structure with high internal quantum efficiency

SIAM Journal on Applied Mathematics

Volumn 59, Issue 6, 1999, Pages 2121-2138

  Rossokhataya, Nataliya ^a   Makarov, Vladimir ^a   Rossokhaty, Victor ^a   Gavrilyuk, Ivan ^b  

^a TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CONVERGENCE OF NUMERICAL METHODS; ENERGY GAP; INITIAL VALUE PROBLEMS; INTEGRODIFFERENTIAL EQUATIONS; NONLINEAR EQUATIONS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

GRADED-BAND-GAP SEMICONDUCTOR STRUCTURES; SOBOLEV SPACES;

SEMICONDUCTOR LASERS;

EID: 0033323982     PISSN: 00361399     EISSN: None     Source Type: Journal    
DOI: 10.1137/s003613999728800x     Document Type: Article

References (21)

1. 1-xAs heterostructures, J. Appl. Phys., 16 (1977), pp. 465-477.
2. xAs : Si graded-band-gap LED's, J. Appl. Phys., 50 (1979), pp. 6353-6362.
3. V. I. KOROL'KOV, B. TOT, A. A. CHEKMAHEVA, V. S. UFEREV, AND A. A. YAKOVENKO, The "reemission" effect influence on nonstationary excess charge carrier transition processes in weakly doped n - GaAs, Phys. Tech. Semicond., 15 (1981), pp. 957-964 (in Russian).
4. M. B. KERIMI AND G. V. TSARENKOV, Photoelectric in the graded-band-gap p - n-structure under reemission, Phys. Tech. Semicond., 17 (1983), pp. 777-781 (in Russian).
5. W. VAN ROOSBROECK, Theory of the flow of electrons and holes in germanium and other semiconductors, Bell Systems Tech. J., 29 (1950), pp. 560-607.
6. M. S. MOCK, Analysis of Mathematical Models of Semiconductor Devices, Boole Press, Dublin, 1983.
7. S. SELBERHER, Analysis and Simulation of Semiconductor Devices, Springer, Vienna, 1984.
8. H. GAJEWSKI, On existence, uniqueness and asymptotic behaviour of solutions of the basic equations for carrier transport, in semiconductors, Z. Angew. Math. Mech., 65 (1985), pp. 101-108.
9. H. GAJEWSKI AND K. GROGER, On the basic equations for carrier transport in semiconductors, J. Math. Anal. Appl., 113 (1986), pp. 12-35.
10. H. GAJEWSKI AND K. GROGER, Semiconductor equations for variable mobilities based on Boltzmann or Fermi-Dirac statistics, Math. Nachr., 140 (1989), pp. 7-36.
11. F. WOLBERT, G. WACHUTKA, B. KRAVBBENDORG, AND T. J. MOUTAKHOAN, Nonisotermal devices simulation using the 2-D numerical process/device simulation TRENDY and application to SOI-devices, IEEE Trans. Comput. Aided Design, 13 (1994), pp. 293-301.
12. J. W. JEROME, Analysis of Charge Transport: A Mathematical Study of Semiconductor Devices, Springer, Berlin. 1996.
13. + -heterostructure with graded-band-gap base. Phys. Tech. Semicond., 13 (1979), pp. 1475-1481 (in Russian).
14. C. C. CHOO, Theory of a forward-biased diffused-junction P-L-N-rectifier: 2. Analytical approximations, Solid State Electron., 16 (1973), pp. 197-211.
15. V. V. TOGATOV, To the switch-off theory of p - n - p - n-structure, Radiotechnic and Electronics, N1 (1973), pp. 166-170 (in Russian).
16. I. P. GAVRILYUK, V. L. MAKAROV, AND N. A. ROSSOKHATAYA, A mathematical model of a variable-band semiconductor diode with re-emission, Comput. Math. Math. Phys., 31 (1991), pp. 76-87.
17. I. P. GAVRILYUK, V. L. MAKAROV, AND N. A. ROSSOKHATAYA, Analysis and numerical solution of integro-differential equations for diode structure based on graded-band-gap semi-conductors with high internal quantum efficiency, Z. Angew. Math. Mech., 73 (1993), pp. T653-T656.
18. O. A. LADYZHENSKAYA, V. A. SOLONNICOV, AND N. N. URAL'TSEVA, Linear and Quasi-linear Equations of Parabolic Type, Nauka, Moscow, 1967 (in Russian).
19. V. A. TRENOGIN, Functional Analysis, Nauka, Moscow, 1980 (in Russian).
20. A. A. SAMARSKI, R. D. LAZAROV, AND V. L. MAKAROV, Difference Schemes for Differential Equations with Generalized Solutions, Vysshaya Shkola, Moscow, 1987 (in Russian).
21. G. V. TZARENCOV, Drift of the recombinative radiation in graded-gap semiconductor, Phys. Tech. Semicond., 13 (1979), pp. 1095-1103 (in Russian).