Structural inhomogeneity in hydrogenated amorphous silicon in relation to photoelectric properties and defect density

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5768-5771

  Sakikawa, Nobuki ^a   Tamao, Masaki ^a   Miyazaki, Seiichi ^a   Hirose, Masataka ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CATHODES; CRYSTAL DEFECTS; DEGRADATION; ELECTRIC CURRENTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; HYDROGENATION; PHOTOELECTRICITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; X RAY SCATTERING;

DEFECT DENSITY; ION FLUX IMPINGING; LIGHT-INDUCED DEGRADATION; SMALL-ANGLE X RAY SCATTERING; STRUCTURAL INHOMOGENEITY;

SEMICONDUCTING SILICON;

EID: 0033323503     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5768     Document Type: Article

References (29)

1. D. L. Staebler and C. R. Wronski: Appl. Phys. Lett. 31 (1977) 161.
2. J. A. Reimer, R. W. Vaughan and J. C. Knights: Solid State Commun. 37 (1981) 161.
3. S. Yamasaki, S. Kuroda, K. Tanaka and S. Hayashi: Solid State Commun. 50 (1984) 9.
4. S. Acco, D. L. Williamson, S. Roorda, W. G. J. H. M. van Sark, A. Polman and W. F. van der Weg: J. Non-Cryst. Solids 227-230 (1998) 128.
5. N. Nakamura, T. Takahama, M. Isomura, M. Nishikuni, K. Yoshida, S. Tsuda, S. Nakano, M. Ohnishi and Y. Kuwano: Jpn. J. Appl. Phys. 28 (1989) 1672.
6. W. Beyer: Tetrahedrally-Bonded Amorphous Semiconductors, eds. D. Adler and H. Fritzsche (Plenum Press, New York and London, 1985) p. 129.
7. J. Isoya, S. Yamasaki, H. Okushi, A. Matsuda and K. Tanaka: Phys. Rev. B 47 (1993) 7013.
8. S. Yamasaki, T. Umeda, J. Isoya, J. H. Zhu and K. Tanaka: J. Non-Cryst. Solids 227-230 (1998) 332.
9. S. Yamasaki and J. Isoya: J. Non-Cryst. Solids 164-166 (1993) 169.
10. H. Fritzshe: Solid State Commun. 94 (1995) 953.
11. T. Gotoh, S. Nonomura, M. Nishio, N. Masui, S. Nitta, M. Kondo and A. Matsuda: J. Non-Cryst. Solids 227-230 (1998) 263.
12. K. Shimizu, T. Tabuchi, M. Iida and H. Okamoto: J. Non-Cryst. Solids 227-230 (1998) 267.
13. I. Hirabayashi, K. Morigaki and S. Nitta: Jpn. J. Appl. Phys. 19 (1980) L357.
14. H. Dersch, J. Stuke and J. Beichler: Appl. Phys. Lett. 38 (1981) 456.
15. K. Morigaki: J. Non-Cryst. Solids 27 (1988) 163.
16. P. C. Taylor: Semiconductors and Semimetals, ed. J. I. Pankove (Academic Press, London, 1984) Vol. 21 C, Chap. 3, p. 99.
17. P. A. Thomas, M. H. Brodsky, D. Kaplan and D. Lepine: Phys. Rev. B 18 (1978) 3059.
18. B. Movaghar, H. Overhor and L. Schweitzer: Proc. 7th Int. Conf. Amorphous and Liquid Semiconductors, Edinburgh, 1977, p. 419.
19. S. Guha, J. Yang, S. J. Jones, Y. Chen and D. L. Williamson: Appl. Phys. Lett. 61 (1992) 1444.
20. T. Kamei, G. Ganguly, N. Hata and A. Matsuda: J. Non-Cryst. Solids 164-166 (1993) 43.
21. G. Ganguly and A. Matsuda: Phys. Rev. B 47 (1993) 3661.
22. N. Sakikawa, M. Tamao, S. Miyazaki and M. Hirose: Jpn. J. Appl. Phys. 37 (1998) 432.
23. T. Hamasaki, M. Ueda, A. Chayahara, M. Hirose and Y. Osaka: Appl. Phys. Lett. 44 (1984) 1049.
24. J. Stuke: Proc. 7th Int. Conf. Amorphous and Liquid Semiconductors, Edinburgh, 1977, p. 406.
25. G. Porod: Kolloid Z. 124 (1951) 83.
26. A. H. Mahan, D. L. Williamson, B. P. Nelson and R. S. Crandall: Phys. Rev. B 40 (1989) 12024.
27. F. Irrera: J. Appl. Phys. 75 (1994) 1396.
28. P. St'ahel, S. Hamma, P. Sladek and P. Rocai Cabbarrocas: J. Non-Cryst. Solids 227-230 (1998) 276.
29. J. M. Gibson, M. M. J. Treacy, P. M. Voyles, H-C. Jin and J. R. Abelson: Appl. Phys. Lett. 73 (1998) 3093.