Preparation and properties of thermoelectric materials for intermediate temperature range applications

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

Volumn 63, Issue 11, 1999, Pages 1448-1453

  Noda, Yasutoshi ^a   Mizuno, Kaoru ^a   Kang, Yan Sheng ^b   Niino, Masayuki ^c   Nishida, Isao A ^d  

^a SHIMANE UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c KAKUDA RESEARCH CENTER   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPOSITION EFFECTS; CRYSTAL GROWTH FROM MELT; HALL EFFECT; INGOTS; PLASMA APPLICATIONS; SEMICONDUCTING SILVER COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINTERING; THERMAL CONDUCTIVITY OF SOLIDS;

HALL MOBILITY; PLASMA ACTIVATED SINTERING (PAS);

SEMICONDUCTING LEAD COMPOUNDS;

EID: 0033322742     PISSN: 00214876     EISSN: None     Source Type: Journal    
DOI: 10.2320/jinstmet1952.63.11_1448     Document Type: Article

References (13)

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