Disorder induced ir anomaly in hexagonal AIGaN short-period superlattices and alloys

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 427-432

  Mintairov, A M ^a   Vlasov, A S ^a   Merz, J L ^a   Korakakis, D ^b   Moustakas, T D ^b   Osinsky, A O ^c   Gaska, R ^c   Smirnov, M B ^d  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b BOSTON UNIVERSITY   (United States)

^c APA Optronics   (United States)

^d GREBENSHCHIKOV INSTITUTE OF SILICATE CHEMISTRY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRON SPECTROSCOPY; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

ALUMINUM GALLIUM NITRIDE; HEXAGONAL TERNARY NITRIDE COMPOUNDS; INFRARED REFLECTANCE SPECTROSCOPY; TRANSMISSION ELECTRON SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0033322588     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

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